Interconnect structure and method

ABSTRACT

A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is divisional of U.S. patent application Ser. No.16/391,035, filed Apr. 22, 2019, and entitled “Interconnect Structureand Method”, which is a continuation of U.S. patent application Ser. No.15/687,230, filed on Aug. 25, 2017, now U.S. Pat. No. 10,269,627, issuedApr. 23, 2019, and entitled, “Interconnect Structure and Method,” whichis a divisional of U.S. patent application Ser. No. 15/058,864, filed onMar. 2, 2016, and entitled “Interconnect Structure and Method,” now U.S.Pat. No. 9,754,822, issued on Sep. 5, 2017, which application isincorporated herein by reference.

BACKGROUND

In the current process of miniaturizing semiconductor devices, low-kdielectric materials are desired as the inter-metal and/or inter-layerdielectric between conductive interconnects in order to reduce theresistive-capacitive (RC) delay in signal propagation due to capacitiveeffects. As such, the lower the dielectric layer constant of thedielectric, the lower the parasitic capacitance of adjacent conductivelines and the lower the RC delay of the integrated circuit (IC).

However, the materials that are currently being considered or used aslow-k dielectric materials are not ideal. In particular, in choosing amaterial based upon its k-value, and particularly based upon its low-kvalue, other characteristics, such as the hardness of the material orits strength, may not be ideal for use in a semiconductor manufacturingprocess. As such, improvements in processes that utilize low-kdielectric materials are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 through 6 are cross-sectional views of intermediate stages inthe manufacturing of an interconnect structure in accordance with someembodiments.

FIG. 7 is a cross-sectional views of an interconnect structure inaccordance with some embodiments.

FIGS. 8 through 11 are cross-sectional views of intermediate stages inthe manufacturing of an interconnect structure in accordance with someembodiments.

FIG. 12 is a cross-sectional views of an interconnect structure inaccordance with some embodiments

FIG. 13 is an example of a Fin Field-Effect Transistor (FinFET) in athree-dimensional view.

FIGS. 14 through 18, 19A-19C, 20A-20C, 21A-21C, 22A-22C, 23A-23C,24A-24C, 25A-25C, 26A-26C, and 27A-27C are cross-sectional views ofintermediate stages in the manufacturing of FinFETs with interconnectstructures in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Interconnect structures and methods of forming the same are provided inaccordance with various embodiments. Intermediate stages of forminginterconnect structures are illustrated. Some embodiments discussedherein are discussed in the context of interconnects formed using a dualdamascene process. In other embodiments, a single damascene process maybe used. Some variations of the embodiments are discussed. One ofordinary skill in the art will readily understand other modificationsthat may be made that are contemplated within the scope of otherembodiments. Although method embodiments are discussed in a particularorder, various other method embodiments may be performed in any logicalorder and may include fewer or more steps described herein.

With reference now to FIG. 1, FIG. 1 illustrates a substrate 10 withactive devices (not shown), metallization layers (not shown) in thesubstrate 10, a conductive element 12 coupled to the metallizationlayers, an optional etch stop layer 14, and a first dielectric layer 16.The substrate 10 may be a semiconductor substrate, such as a bulksemiconductor, a semiconductor-on-insulator (SOI) substrate, or thelike, which may be doped (e.g., with a p-type or an n-type dopant) orundoped. The substrate 10 may be a wafer, such as a silicon wafer.Generally, an SOI substrate comprises a layer of a semiconductormaterial formed on an insulator layer. The insulator layer may be, forexample, a buried oxide (BOX) layer, a silicon oxide layer, or the like.The insulator layer is provided on a substrate, typically a silicon orglass substrate. Other substrates, such as a multi-layered or gradientsubstrate may also be used. In some embodiments, the semiconductormaterial of the substrate 10 may include silicon; germanium; a compoundsemiconductor including silicon carbide, gallium arsenic, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide;an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs,GaInP, and/or GaInAsP; or combinations thereof.

The active devices may comprise a wide variety of active devices such astransistors and the like and passive devices such as capacitors,resistors, inductors and the like that may be used to generate thedesired structural and functional parts of the design. The activedevices and passive devices may be formed using any suitable methodseither within or else on the substrate 10.

The metallization layers are formed over active devices and are designedto connect the various active devices to form functional circuitry forthe design. In an embodiment the metallization layers are formed ofalternating layers of dielectric and conductive material and may beformed through any suitable process (such as deposition, damascene, dualdamascene, etc.). In an embodiment there may be one to four layers ofmetallization separated from each other by at least one interlayerdielectric layer (ILD), but the precise number of metallization layersis dependent upon the design.

The conductive element 12 may be formed in or over the metallizationlayers, and is a region to which an interconnect 24 (not illustrated inFIG. 1 but illustrated and described below in FIG. 6) will make physicaland electrical connection. In an embodiment the conductive element 12may be a material such as copper formed using, e.g., a damascene or dualdamascene process, whereby an opening is formed within the metallizationlayers, the opening is filled and/or overfilled with a conductivematerial such as copper, and a planarization process is performed toembed the conductive material within the metallization layers. However,any suitable material and any suitable process may be used to form theconductive element 12.

The etch stop layer 14 may be formed over the substrate 10, anymetallization layers, and the conductive elements 12. In someembodiments, the etch stop layer 14 may be silicon nitride, siliconcarbide, silicon oxide, low-k dielectrics such as carbon doped oxides,extremely low-k dielectrics such as porous carbon doped silicon dioxide,the like, or a combination thereof, and deposited by CVD, PVD, ALD, aspin-on-dielectric process, the like, or a combination thereof.

The first dielectric layer 16 may be formed in order to help isolate theinterconnect 24 from other adjacent electrical routing lines. In anembodiment the first dielectric layer 16 may be, e.g., a low-kdielectric film intended to help isolate the interconnect 24 from otherstructures. By isolating the interconnect 24, the resistance-capacitance(RC) delay of the interconnect 24 may be reduced, thereby improving theoverall efficiency and speed of electricity through the interconnect 24.

In an embodiment the first dielectric layer 16 may be a porous materialsuch as SiOCN, SiCN, SiOC, SiOCH, or the like and may be formed byinitially forming a precursor layer over the etch stop layer 14, ifpresent. The precursor layer may comprise both a matrix material and aporogen interspersed within the matrix material, or may alternativelycomprise the matrix material without the porogen. In an embodiment theprecursor layer may be formed, e.g., by co-depositing the matrix and theporogen using a process such as plasma enhanced chemical vapordeposition (PECVD) where the matrix material is deposited at the sametime as the porogen, thereby forming the precursor layer with the matrixmaterial and the porogen mixed together. However, as one of ordinaryskill in the art will recognize, co-deposition using a simultaneousPECVD process is not the only process that may be used to form theprecursor layer. Any suitable process, such as premixing the matrixmaterial and the porogen material as a liquid and then spin-coating themixture onto the etch stop layer 14, may also be utilized.

The precursor layer may be formed to a thickness sufficient to providethe isolation and routing characteristics that are desired of the firstdielectric layer 16. In an embodiment, the precursor layer may be formedto a first thickness T1 of in a range from about 10 Å and about 1000 Å,such as about 300 Å. However, these thicknesses are meant to beillustrative only, and are not intended to limit the scope of theembodiments, as the precise thickness of the precursor layer may be anysuitable desired thickness.

The matrix material, or base dielectric material, may be formed using aprocess such as PECVD, although any suitable process, such as a chemicalvapor deposition (CVD), physical vapor deposition (PVD), or even spin-oncoating, may alternatively be utilized. The PECVD process may utilizeprecursors such as methyldiethoxy silane (DEMS), although otherprecursors such as other silanes, alkylsilanes (e.g., trimethylsilaneand tetramethylsilane), alkoxysilanes (e.g., methyltriethoxysilane(MTEOS), methyltrimethoxysilane (MTMOS), methyldimethoxysilane (MDMOS),trimethylmethoxysilane (TMMOS) and dimethyldimethoxysilane (DMDMOS)),linear siloxanes and cyclic siloxanes (e.g.,octamethylcyclotetrasiloxane (OMCTS) and tetramethylcyclotetrasiloxane(TMCTS)), combinations of these, and the like may alternatively beutilized. However, as one of ordinary skill in the art will recognize,the materials and processes listed herein are merely illustrative andare not meant to be limiting to the embodiments, as any other suitablematrix precursors may alternatively be utilized.

The porogen may be a molecule that can be removed from the matrixmaterial after the matrix material has set in order to form pores withinthe matrix and thereby reduce the overall value of the dielectricconstant of the first dielectric layer 16. The porogen may be a materialthat is big enough to form the pores while also remaining small enoughsuch that the size of the individual pores does not overly displace thematrix material. As such, the porogen may comprise an organic moleculesuch as alpha-terpinene (ATRP) (1-Isopropyl-4-Methyl-1,3-Cyclohexadiene)or Cyclooctane (boat shape) or 1,2-bis(triethoxysilyl) ethane Silicon.

After the precursor layer has been formed with the porogen dispersedwithin the matrix material, the porogen is removed from the matrixmaterial to form the pores within the matrix material. In an embodimentthe removal of the porogen is performed by an annealing process whichcan break down and vaporize the porogen material, thereby allowing theporogen material to diffuse and leave the matrix material, therebyleaving behind a structurally intact porous dielectric material as thefirst dielectric layer 16. For example, an anneal of in a range fromabout 200° C. and about 500° C., such as about 400° C., for in a rangefrom about 10 seconds to about 600 seconds, such as about 200 seconds,may be utilized.

However, as one of ordinary skill in the art will recognize, the thermalprocess described above is not the only method that may be utilized toremove the porogen from the matrix material to form the first dielectriclayer 16. Other suitable processes, such as irradiating the porogen withUV radiation to decompose the porogen or utilizing microwaves todecompose the porogen, may alternatively be utilized. These and anyother suitable process to remove all or a portion of the porogen are allfully intended to be included within the scope of the embodiments.

However, the first dielectric layer 16 as described above does not havethe desired resistance to withstand unbalanced stress that can occurduring a patterning process. For example, trench openings that arelocated adjacent to a via opening may deform a different amount than atrench opening that is located further away from the via opening, suchas by being the third trench opening removed from the via opening. In aparticular example, each of the trench openings may be patterned with aprocess that attempts to form the trench openings to have a similarwidth, but because of the unbalanced forces within each opening, atrench opening adjacent to the via opening may have that desired widthreduced by 4 nm to 5 nm or 6 nm as compared to the width achieved by atrench opening located away from the via opening. Such reductions anddifferences between the various trench openings could cause gap-fillingproblems in subsequent metallization processes (discussed furtherbelow).

FIG. 2 illustrates forming an insert layer 18 over the first dielectriclayer 16 in order to provide a frame for additional structural supportto increase the robustness of the first dielectric layer 16 and othersubsequently deposited layers. In addition, the inclusion of the insertlayer 18 impacts the capacitance less than simply changing the bulk filmfrom being a low-k dielectric film. In an embodiment the insert layer 18is a material with a larger hardness and a higher K-value than the firstdielectric layer 16. For example, in an embodiment in which the firstdielectric layer 16 has a hardness of in a range from about 1.5 GPa toabout 3.0 GPa, such as about 2 GPa, the insert layer 18 may have ahardness of greater than about 8 GPa, such as in a range from about 10GPa to about 13 GPa, such as about 12 GPa. In other words, the insertlayer 18 may have a hardness that is greater than the first dielectriclayer 16 by at least 5 GPa. Similarly, in an embodiment in which thefirst dielectric layer 16 has a K-value in a range from about 2.3 toabout 2.9, the insert layer 18 may have a K-value of greater than about3.0.

In some embodiments, the insert layer 18 may comprise a material such asSi_(x)O_(y) (e.g., SiO₂), Si_(x)C_(y) (e.g., SiC), Si_(x)O_(y)C_(z)(e.g., SiOC), and Si_(x)C_(y)N_(z) (e.g., SiCN), combinations of these,or the like. However, any suitable material may be used to provide theadditional structural support for the first dielectric layer 16.

In an embodiment the insert layer 18 may be formed using a depositionprocess such as chemical vapor deposition (CVD), atomic layer deposition(ALD), physical vapor deposition (PVD), plasma enhanced CVD (PECVD),spin-on coating, or the like. In other embodiments, such as anembodiment in which SiO₂ if formed, an initial layer of a first materialsuch as silicon may be deposited or formed, and then the layer may betreated with, e.g., oxygen in order to form the final material for theinsert layer 18. Any suitable process may be used to form the insertlayer 18. The insert layer 18 may be formed to a second thickness T2 ofin a range from about 10 Å to about 100 Å, such as about 50 Å.

FIG. 3 illustrates forming a second dielectric layer 20 over the insertlayer 18. In an embodiment the second dielectric layer 20 may be formedfrom a similar material and in a similar fashion as the first dielectriclayer 16. For example, the second dielectric layer 20 may comprise aporous material such as ATRP (1-Isopropyl-4-Methyl-1, 3-Cyclohexadiene)or Cyclooctane (boat shape) or 1,2-bis(triethoxysilyl) ethane Siliconformed by initially placing a matrix material and a porogen and thenremoving the porogen. However, in other embodiments the seconddielectric layer 20 may be a different material than the firstdielectric layer 16. Any suitable combination of materials may beformed. In an embodiment the second dielectric layer 20 may be formed toa third thickness T3 of in a range from about 10 Å to about 1000 Å, suchas about 600 Å.

FIG. 4 illustrates patterning the second dielectric layer 20, the insertlayer 18, the first dielectric layer 16, and the etch stop layer 14, ifpresent, to form openings 22 to expose portions of the conductiveelements 12. The openings 22 allows a portion of the interconnects 24 tomake physical and electrical contact with the conductive elements 12. Insome embodiments, the openings 22 are dual damascene openings includingupper trench sections 22A and lower via-hole sections 22B. Although theembodiments illustrate dual damascene openings in the layers 16, 18, and20, the method disclosed in the present application is applicable for anembodiment having single damascene openings in the layers. In dualdamascene techniques including a “via-first” patterning method or a“trench-first” patterning method, the upper trench section 22A and thelower via-hole section 22B may be formed using photolithography withmasking technologies and anisotropic etch operations (e.g. plasmaetching or reactive ion etching).

For example, in a via-first embodiment, a first photoresist (not shown)is formed over the second dielectric layer 20 and patterned to expose aportion of the second dielectric layer 20. The first photoresist can beformed by using a spin-on technique and can be patterned usingacceptable photolithography techniques. Once the first photoresist ispatterned, a first anisotropic etching process is performed to form thevia openings to the conductive elements 12, and the first photoresistmay act as a mask for the etching process. After the first anisotropicetching process, the first photoresist is removed, such as by anacceptable ashing process. After the first photoresist is removed, asecond photoresist is formed over the second dielectric layer 20 andpatterned to expose a portion of the second dielectric layer 20. Thesecond photoresist can be formed by using a spin-on technique and can bepatterned using acceptable photolithography techniques. Once the secondphotoresist is patterned, a second anisotropic etching process isperformed to form the trench section of the openings, and the secondphotoresist may act as a mask for the etching process. After the secondanisotropic etching process, the second photoresist is removed, such asby an acceptable ashing process.

Whereas previous processes (which do not utilize the insert layer 18)resulted in unbalanced stresses from nearby via etching processes thatresulted in a bending of the top opening of trenches adjacent to the viaand caused critical dimension mismatch issues in a range from trenchopenings at different locations around the device, the presence of theinsert layer 18 will help to prevent the first dielectric layer 16 andthe second dielectric layer 20 from bending or collapsing. As such, thetop of the openings 22 will better retain the desired shape, andopenings 22 across the device may have less variation. For example,whereas previous processes without the insert layer 18 may result inbending that could cause variations in widths in a range from differentopenings 22 of in a range from about 5 nm to about 6 nm, such as about5.5 nm (or greater than 10% of the desired pattern), the inclusion ofthe insert layer 18 may reduce the amount of bending at the top of theopenings 22.

FIG. 5 illustrates a filling of the openings 22 with a conductivematerial 24. In an embodiment the openings 22 may be filled with abarrier layer 23 and a conductive material 24. The barrier layer 23 maycomprise a conductive material such as titanium nitride, although othermaterials, such as tantalum nitride, titanium, a dielectric, or the likemay alternatively be utilized. The barrier layer 23 may be formed usinga CVD process, such as PECVD. In some embodiments, the barrier layer 23is formed to have a thickness in a range from about 10 Å to about 1000Å. However, other processes, such as sputtering or metal organicchemical vapor deposition (MOCVD), may be used. The barrier layer 23 isformed so as to contour to the underlying shape of the openings 22.

The conductive material 24 may comprise copper, although other suitablematerials such as aluminum, alloys, doped polysilicon, combinationsthereof, and the like, may alternatively be utilized. The conductivematerial may be formed by first depositing a seed layer (not separatelyillustrated in FIG. 5) and then electroplating copper onto the seedlayer, filling and overfilling the openings 22.

Once the openings 22 have been filled, FIG. 6 illustrates removingexcess barrier layer 23 and excess conductive material 24 outside of theopenings 22 to form interconnects 24. In some embodiments, the removalof excess barrier layer 23 and excess conductive material 24 is by agrinding process such as chemical mechanical polishing (CMP), althoughany suitable removal process may be used. In some embodiments, theinterconnects 24 are dual damascene interconnects including an trenchsection 24A and a via section 24B. In some embodiments, the via sections24B of the interconnects 24 have heights D1 measured from a surface ofthe substrate 10 with the heights D1 being in a range from about 400 Åto about 450 Å. In some embodiments, the trench sections 24A of theinterconnects 24 have heights D2 measured from top surfaces of trenchsections 24A to bottom surfaces of the trench sections 24A with theheights D2 being in a range from about 410 Å to about 460 Å. In someembodiments, bottom surfaces of the trench sections 24A of theinterconnects 24 are separated from a top surface of the insert layer 18by a distance D3 with the distance D3 being in a range from about 20 Åto about 130 Å.

By forming the insert layer 18 to provide additional support for thefirst dielectric layer 16 as well as the second dielectric layer 20, thedisfiguration and bending that would normally occur during thepatterning process may be mitigated or prevented. As such, thedeleterious effects of these undesired disfigurations, such as variablereduced widths along a top of the openings 22, may be prevented. Suchpreventions allow for fewer defects during the subsequent fillingprocess.

FIG. 7 illustrates a cross-section view of an interconnect structure inaccordance with another embodiment. The embodiment in FIG. 7 is similarto the embodiments illustrated in FIGS. 1 through 6 except that in thisembodiment the insert layer 18 is formed in the trench section of theinterconnects 24 as opposed to the via section in the previousembodiment. The materials and formation processes of the firstdielectric layer 16, the insert layer 18, and the second dielectriclayer 20 may be similar to the previously described embodiment exceptthat that the relative thicknesses of the layers may be altered, andthus, the description of these layers is not repeated herein. Detailsregarding this embodiment that are similar to those for the previouslydescribed embodiment will not be repeated herein.

In this embodiment the first dielectric layer 16 may have a fourththickness T4 of in a range from about 10 Å to about 1000 Å, such asabout 600 Å, the insert layer 18 may have a second thickness T2, and thesecond dielectric layer 20 may have a fifth thickness T5 of in a rangefrom about 10 Å to about 1000 Å, such as about 300 Å. In thisembodiment, bottom surfaces of the trench sections 24A of theinterconnects 24 are separated from a bottom surface of the insert layer18 by a distance D4 with the distance D4 being in a range from about 30Å to about 150 Å.

FIGS. 8 through 11 are cross-sectional views of intermediate stages inthe manufacturing of an interconnect structure in accordance withanother embodiment. This embodiment is similar to the embodimentsillustrated in FIGS. 1 through 6 except that in this embodiment theinsert layer is formed by a plasma treatment process as opposed to thedeposition process in the previous embodiment. Details regarding thisembodiment that are similar to those for the previously describedembodiment will not be repeated herein.

FIG. 8 is at a similar point of processing as FIG. 1 described above andthe descriptions of the processes and steps performed up until thispoint are not repeated herein. FIG. 8 includes the substrate 10, theconductive elements 12, the optional etch stop layer 14, and the firstdielectric layer 16.

FIG. 9 illustrates the formation of insert layer 26 over the firstdielectric layer 16 in order to provide a frame for additionalstructural support to increase the robustness of the first dielectriclayer 16 and other subsequently deposited layers. In addition, theinclusion of the insert layer 26 impacts the capacitance less thansimply changing the bulk film from being a low-k dielectric film. In anembodiment the insert layer 26 is a material with a larger hardness anda higher K-value than the first dielectric layer 16. For example, insome embodiments, the first dielectric layer 16 has a K-value of about2.6 or less and the insert layer 26 has a K-value of greater than 2.8,such as about 3.0.

In some embodiments, the insert layer 26 is formed by performing aplasma treatment process on the first dielectric layer 16. The plasmatreatment process may include plasma reaction gases such as He, Ar, NH₃,CO₂, N₂, O₂, the like, or a combination thereof. In some embodiments,the plasma treatment process may be performed at a temperature in arange from about 200° C. to about 400° C., at a pressure in a range fromabout 0.5 torr to about 10 torr, and at a treatment power (sometimesreferred to as discharge power and/or bombardment intensity) in a rangefrom about 100 Watts (W) to about 500 W. In some embodiments, the plasmasystem is a direct plasma system, and in other embodiments, the plasmasystem is a remote plasma system. The plasma treatment process mayconvert at least an upper portion of the first dielectric layer 16 intothe insert layer 26 such that the thickness of the first dielectriclayer 16 is reduced. In some embodiments, the insert layer 26 is atleast partially formed from the plasma treated first dielectric layer16, while, in other embodiments, the insert layer 26 consists primarilyof plasma treated first dielectric layer 16.

FIG. 10 illustrates forming the second dielectric layer 20 over theinsert layer 26. In an embodiment the second dielectric layer 20 may beformed from a similar material and in a similar fashion as the firstdielectric layer 16. However, in other embodiments the second dielectriclayer 20 may be a different material than the first dielectric layer 16.Any suitable combination of materials may be formed. In an embodimentthe second dielectric layer 20 may be formed to a thickness T8 of in arange from about 10 Å to about 1000 Å, such as about 600 Å. The insertlayer 26 may be formed to a thickness T7 of in a range from about 10 Åto about 100 Å, such as about 50 Å. The first dielectric layer 16 may beformed to a thickness T6 of in a range from about 10 Å to about 1000 Å,such as about 300 Å.

After the second dielectric layer 20 is formed, processing similar tothose described above in FIGS. 4, 5, and 6 are performed to form thestructure of FIG. 11, which is at a similar point of processing as FIG.6. The processes and steps of FIGS. 4, 5, and 6 have been describedabove and are not repeated herein.

FIG. 12 is a cross-sectional views of an interconnect structure inaccordance with another embodiment. The embodiment in FIG. 12 is similarto the embodiment illustrated in FIGS. 8 through 11 except that in thisembodiment the insert layer 26 is formed in the trench section of theinterconnects 24 as opposed to the via section in the previousembodiment. The materials and formation processes of the firstdielectric layer 16, the insert layer 26, and the second dielectriclayer 20 may be similar to the previously described embodiment exceptthat that the relative thicknesses of the layers may be altered, andthus, the description of these layers is not repeated herein. Detailsregarding this embodiment that are similar to those for the previouslydescribed embodiment will not be repeated herein.

In this embodiment the first dielectric layer 16 may have a thickness T9in a range from about 10 Å to about 1000 Å, such as about 600 Å, theinsert layer 26 may thickness T7, and the second dielectric layer 20 mayhave a thickness T10 in a range from about 10 Å to about 1000 Å, such asabout 300 Å. In this embodiment, bottom surfaces of the trench sections24A of the interconnects 24 are separated from a bottom surface of theinsert layer 26 by the distance D4.

By providing the insert layer as a frame for additional structuralsupport, the normally weaker porous material of the first dielectriclayer 16 and second dielectric layer 20 may be supported. Suchadditional support helps to reduce variances between different openingsthat may be caused by their proximity (or lack of proximity) toneighboring openings. This prevents complications that could ariseduring subsequent gap-filling processes.

FIGS. 14 through 18, 19A-19C, 20A-20C, 21A-21C, 22A-22C, 23A-23C,24A-24C, 25A-25C, 26A-26C, and 27A-27C are cross-sectional views ofintermediate stages in the manufacturing of FinFETs with interconnectstructures in accordance with some embodiments.

FIG. 13 illustrates an example of a fin field-effect transistor (FinFET)30 in a three-dimensional view. The FinFET 30 comprises a fin 36 on asubstrate 32. The substrate 32 includes isolation regions 34, and thefin 36 protrudes above and from between neighboring isolation regions34. A gate dielectric 38 is along sidewalls and over a top surface ofthe fin 36, and a gate electrode 40 is over the gate dielectric 38.Source/drain regions 42 and 44 are disposed in opposite sides of the fin36 with respect to the gate dielectric 38 and gate electrode 40. FIG. 13further illustrates reference cross-sections that are used in laterfigures. Cross-section A-A is across a channel, gate dielectric 38, andgate electrode 40 of the FinFET 30. Cross-section B/C-B/C isperpendicular to cross-section A-A and is along a longitudinal axis ofthe fin 36 and in a direction of, for example, a current flow betweenthe source/drain regions 42 and 44. Subsequent figures refer to thesereference cross-sections for clarity.

Some embodiments discussed herein are discussed in the context ofFinFETs formed using a gate-last process. In other embodiments, agate-first process may be used. Also, some embodiments contemplateaspects used in planar devices, such as planar FETs.

FIGS. 14 through 27C are cross-sectional views of intermediate stages inthe manufacturing of FinFETs in accordance with an exemplary embodiment.FIGS. 14 through 18 illustrate reference cross-section A-A illustratedin FIG. 13, except for multiple FinFETs. In FIGS. 19A through 27C,figures ending with an “A” designation are illustrated along a similarcross-section A-A; figures ending with a “B” designation are illustratedalong a similar cross-section B/C-B/C and in a first region on asubstrate; and figures ending with a “C” designation are illustratedalong a similar cross-section B/C-B/C and in a second region on asubstrate.

FIG. 14 illustrates a substrate 50. Substrate 50 may be a semiconductorsubstrate, such as a bulk semiconductor, a semiconductor-on-insulator(SOI) substrate, or the like, which may be doped (e.g., with a p-type oran n-type dopant) or undoped. The substrate 50 may be a wafer, such as asilicon wafer. Generally, an SOI substrate comprises a layer of asemiconductor material formed on an insulator layer. The insulator layermay be, for example, a buried oxide (BOX) layer, a silicon oxide layer,or the like. The insulator layer is provided on a substrate, typically asilicon or glass substrate. Other substrates, such as a multi-layered orgradient substrate may also be used. In some embodiments, thesemiconductor material of the substrate 50 may include silicon;germanium; a compound semiconductor including silicon carbide, galliumarsenic, gallium phosphide, indium phosphide, indium arsenide, and/orindium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof.

The substrate 50 has a first region 50B and a second region 50C. Thefirst region 50B (which corresponds to subsequent figures ending in “B”)can be for forming n-type devices, such as NMOS transistors, such asn-type FinFETs. The second region 50C (which corresponds to subsequentfigures ending in “C”) can be for forming p-type devices, such as PMOStransistors, such as p-type FinFETs.

FIGS. 15 and 16 illustrate the formation of fins 52 and isolationregions 54 between neighboring fins 52. In FIG. 15 fins 52 are formed inthe substrate 50. In some embodiments, the fins 52 may be formed in thesubstrate 50 by etching trenches in the substrate 50. The etching may beany acceptable etch process, such as a reactive ion etch (RIE), neutralbeam etch (NBE), the like, or a combination thereof. The etch may beanisotropic.

In FIG. 16 an insulation material 54 is formed between neighboring fins52 to form the isolation regions 54. The insulation material 54 may bean oxide, such as silicon oxide, a nitride, the like, or a combinationthereof, and may be formed by a high density plasma chemical vapordeposition (HDP-CVD), a flowable CVD (FCVD) (e.g., a CVD-based materialdeposition in a remote plasma system and post curing to make it convertto another material, such as an oxide), the like, or a combinationthereof. Other insulation materials formed by any acceptable process maybe used. An anneal process may be performed once the insulation materialis formed. In the illustrated embodiment, the insulation material 54 issilicon oxide formed by a FCVD process. The insulating material 54 maybe referred to as isolation regions 54. Further in FIG. 5 and in step204, a planarization process, such as a chemical mechanical polish(CMP), may remove any excess insulation material 54 and form topsurfaces of the isolation regions 54 and top surfaces of the fins 52that are coplanar.

FIG. 17 illustrates the recessing of the isolation regions 54 to formShallow Trench Isolation (STI) regions 54. The isolation regions 54 arerecessed such that fins 56 in the first region 50B and in the secondregion 50C protrude from between neighboring isolation regions 54.Further, the top surfaces of the isolation regions 54 may have a flatsurface as illustrated, a convex surface, a concave surface (such asdishing), or a combination thereof. The top surfaces of the isolationregions 54 may be formed flat, convex, and/or concave by an appropriateetch. The isolation regions 54 may be recessed using an acceptableetching process, such as one that is selective to the material of theisolation regions 54. For example, a chemical oxide removal using aCERTAS® etch or an Applied Materials SICONI tool or dilute hydrofluoric(dHF) acid may be used.

A person having ordinary skill in the art will readily understand thatthe process described with respect to FIGS. 15 through 17 is just oneexample of how fins 56 may be formed. In other embodiments, a dielectriclayer can be formed over a top surface of the substrate 50; trenches canbe etched through the dielectric layer; homoepitaxial structures can beepitaxially grown in the trenches; and the dielectric layer can berecessed such that the homoepitaxial structures protrude from thedielectric layer to form fins. In still other embodiments,heteroepitaxial structures can be used for the fins. For example, thesemiconductor strips 52 in FIG. 16 can be recessed, and a materialdifferent from the semiconductor strips 52 may be epitaxially grown intheir place. In an even further embodiment, a dielectric layer can beformed over a top surface of the substrate 50; trenches can be etchedthrough the dielectric layer; heteroepitaxial structures can beepitaxially grown in the trenches using a material different from thesubstrate 50; and the dielectric layer can be recessed such that theheteroepitaxial structures protrude from the dielectric layer to formfins 56. In some embodiments where homoepitaxial or heteroepitaxialstructures are epitaxially grown, the grown materials may be in situdoped during growth, which may obviate prior and subsequentimplantations although in situ and implantation doping may be usedtogether. Still further, it may be advantageous to epitaxially grow amaterial in an NMOS region different from the material in a PMOS region.In various embodiments, the fins 56 may comprise silicon germanium(Si_(x)Ge_(1-x), where x can be between approximately 0 and 100),silicon carbide, pure or substantially pure germanium, a III-V compoundsemiconductor, a II-VI compound semiconductor, or the like. For example,the available materials for forming III-V compound semiconductorinclude, but are not limited to, InAs, AlAs, GaAs, InP, GaN, InGaAs,InAlAs, GaSb, AlSb, AlP, GaP, and the like.

In FIG. 17, appropriate wells may be formed in the fins 56, fins 52,and/or substrate 50. For example, a P well may be formed in the firstregion 50B, and an N well may be formed in the second region 50C.

The different implant steps for the different regions 50B and 50C may beachieved using a photoresist or other masks (not shown). For example, aphotoresist is formed over the fins 56 and the isolation regions 54 inthe first region 50B. The photoresist is patterned to expose the secondregion 50C of the substrate 50, such as a PMOS region. The photoresistcan be formed by using a spin-on technique and can be patterned usingacceptable photolithography techniques. Once the photoresist ispatterned, an n-type impurity implant is performed in the second region50C, and the photoresist may act as a mask to substantially preventn-type impurities from being implanted into the first region 50B, suchas an NMOS region. The n-type impurities may be phosphorus, arsenic, orthe like implanted in the first region to a concentration of equal to orless than 10¹⁸ cm⁻³, such as in a range from about 10¹⁷ cm⁻³ to about10¹⁸ cm⁻³. After the implant, the photoresist is removed, such as by anacceptable ashing process.

Following the implanting of the second region 50C, a photoresist isformed over the fins 56 and the isolation regions 54 in the secondregion 50C. The photoresist is patterned to expose the first region 50Bof the substrate 50, such as the NMOS region. The photoresist can beformed by using a spin-on technique and can be patterned usingacceptable photolithography techniques. Once the photoresist ispatterned, a p-type impurity implant may be performed in the firstregion 50B, and the photoresist may act as a mask to substantiallyprevent p-type impurities from being implanted into the second region,such as the PMOS region. The p-type impurities may be boron, BF₂, or thelike implanted in the first region to a concentration of equal to orless than 10¹⁸ cm⁻³, such as in a range from about 10¹⁷ cm⁻³ to about10¹⁸ cm⁻³. After the implant, the photoresist may be removed, such as byan acceptable ashing process.

After the implants of the first region 50B and the second region 50C, ananneal may be performed to activate the p-type and n-type impuritiesthat were implanted. The implantations may form a p-well in the firstregion 50B, e.g., the NMOS region, and an n-well in the second region50C, e.g., the PMOS region. In some embodiments, the grown materials ofepitaxial fins may be in situ doped during growth, which may obviate theimplantations, although in situ and implantation doping may be usedtogether.

In FIG. 18, a dummy dielectric layer 58 is formed on the fins 56. Thedummy dielectric layer 58 may be, for example, silicon oxide, siliconnitride, a combination thereof, or the like, and may be deposited orthermally grown according to acceptable techniques. A dummy gate layer60 is formed over the dummy dielectric layer 58, and a mask layer 62 isformed over the dummy gate layer 60. The dummy gate layer 60 may bedeposited over the dummy dielectric layer 58 and then planarized, suchas by a CMP. The mask layer 62 may be deposited over the dummy gatelayer 60. The dummy gate layer 60 may be made of, for example,polysilicon, although other materials that have a high etchingselectivity from the etching of isolation regions 54 may also be used.The mask layer 62 may include, for example, silicon nitride or the like.In this example, a single dummy gate layer 60 and a single mask layer 62are formed across the first region 50B and the second region 50C. Inother embodiments, separate dummy gate layers may be formed in the firstregion 50B and the second region 50C, and separate mask layers may beformed in the first region 50B and the second region 50C.

In FIGS. 19A, 19B, and 29C, the mask layer 62 may be patterned usingacceptable photolithography and etching techniques to form masks 72 inthe first region 50B (as illustrated in FIG. 19B) and masks 78 in thesecond region 50C (as illustrated in FIG. 19C). The pattern of the masks72 and 78 then may be transferred to the dummy gate layer 60 and dummydielectric layer 58 by an acceptable etching technique to form dummygates 70 in the first region 50B and dummy gates 76 in the second region50C. The dummy gates 70 and 76 cover respective channel regions of thefins 56. The dummy gates 70 and 76 may also have a lengthwise directionsubstantially perpendicular to the lengthwise direction of respectiveepitaxial fins.

In FIGS. 20A, 20B, and 20C, gate seal spacers 80 can be formed onexposed surfaces of respective dummy gates 70 and 76 and/or fins 56. Athermal oxidation or a deposition followed by an anisotropic etch mayform the gate seal spacers 80.

After the formation of the gate seal spacers 80, implants for lightlydoped source/drain (LDD) regions may be performed. Similar to theimplants discussed above in FIG. 17, a mask, such as a photoresist, maybe formed over the first region 50B, e.g., NMOS region, while exposingthe second region 50C, e.g., PMOS region, and p-type impurities may beimplanted into the exposed fins 56 in the second region 50C. The maskmay then be removed. Subsequently, a mask, such as a photoresist, may beformed over the second region 50C while exposing the first region 50B,and n-type impurities may be implanted into the exposed fins 56 in thefirst region 50B. The mask may then be removed. The n-type impuritiesmay be the any of the n-type impurities previously discussed, and thep-type impurities may be the any of the p-type impurities previouslydiscussed. The lightly doped source/drain regions may have aconcentration of impurities of from about 10¹⁵ cm⁻³ to about 10¹⁶ cm⁻³.An anneal may be used to activate the implanted impurities.

Further in FIGS. 20A, 20B, and 20C, epitaxial source/drain regions 82and 84 are formed in the fins 56. In the first region 50B, epitaxialsource/drain regions 82 are formed in the fins 56 such that each dummygate 70 is disposed between respective neighboring pairs of theepitaxial source/drain regions 82. In some embodiments that epitaxialsource/drain regions 82 may extend into the fins 52. In the secondregion 50C, epitaxial source/drain regions 84 are formed in the fins 56such that each dummy gate 76 is disposed between respective neighboringpairs of the epitaxial source/drain regions 84. In some embodiments thatepitaxial source/drain regions 84 may extend into the fins 52.

Epitaxial source/drain regions 82 in the first region 50B, e.g., theNMOS region, may be formed by masking the second region 50C, e.g., thePMOS region, and conformally depositing a dummy spacer layer in thefirst region 50B followed by an anisotropic etch to form dummy gatespacers (not shown) along sidewalls of the dummy gates 70 and/or gateseal spacers 80 in the first region 50B. Then, source/drain regions ofthe epitaxial fins in the first region 50B are etched to form recesses.The epitaxial source/drain regions 82 in the first region 50B areepitaxially grown in the recesses. The epitaxial source/drain regions 82may include any acceptable material, such as appropriate for n-typeFinFETs. For example, if the fin 56 is silicon, the epitaxialsource/drain regions 82 may include silicon, SiC, SiCP, SiP, or thelike. The epitaxial source/drain regions 82 may have surfaces raisedfrom respective surfaces of the fins 56 and may have facets.Subsequently, the dummy gate spacers in the first region 50B areremoved, for example, by an etch, as is the mask on the second region50C.

Epitaxial source/drain regions 84 in the second region 50C, e.g., thePMOS region, may be formed by masking the first region 50B, e.g., theNMOS region, and conformally depositing a dummy spacer layer in thesecond region 50C followed by an anisotropic etch to form dummy gatespacers (not shown) along sidewalls of the dummy gates 76 and/or gateseal spacers 80 in the second region 50C. Then, source/drain regions ofthe epitaxial fins in the second region 50C are etched to form recesses.The epitaxial source/drain regions 84 in the second region 50C areepitaxially grown in the recesses. The epitaxial source/drain regions 84may include any acceptable material, such as appropriate for p-typeFinFETs. For example, if the fin 56 is silicon, the epitaxialsource/drain regions 84 may comprise SiGe, SiGeB, Ge, GeSn, or the like.The epitaxial source/drain regions 84 may have surfaces raised fromrespective surfaces of the fins 56 and may have facets. Subsequently,the dummy gate spacers in the second region 50C are removed, forexample, by an etch, as is the mask on the first region 50B.

In FIGS. 21A, 21B, and 21C, gate spacers 86 are formed on the gate sealspacers 80 along sidewalls of the dummy gates 70 and 76. The gatespacers 86 may be formed by conformally depositing a material andsubsequently anisotropically etching the material. The material of thegate spacers 86 may be silicon nitride, SiCN, a combination thereof, orthe like.

The epitaxial source/drain regions 82 and 84 and/or epitaxial fins maybe implanted with dopants to form source/drain regions, similar to theprocess previously discussed for forming lightly doped source/drainregions, followed by an anneal. The source/drain regions may have animpurity concentration of in a range from about 10¹⁹ cm⁻³ to about 10²¹cm⁻³. The n-type impurities for source/drain regions in the first region50B, e.g., the NMOS region, may be any of the n-type impuritiespreviously discussed, and the p-type impurities for source/drain regionsin the second region 50C, e.g., the PMOS region, may be any of thep-type impurities previously discussed. In other embodiments, theepitaxial source/drain regions 82 and 84 may be in situ doped duringgrowth.

In FIGS. 22A, 22B, and 22C, an ILD 88 is deposited over the structureillustrated in FIGS. 21A, 21B, and 21C. In an embodiment, the ILD 88 isa flowable film formed by a flowable CVD. In some embodiments, the ILD88 is formed of a dielectric material such as Phospho-Silicate Glass(PSG), Boro-Silicate Glass (BSG), Boron-Doped Phospho-Silicate Glass(BPSG), undoped Silicate Glass (USG), or the like, and may be depositedby any suitable method, such as CVD, or PECVD.

In FIGS. 23A, 23B, and 23C, a planarization process, such as a CMP, maybe performed to level the top surface of ILD 88 with the top surfaces ofthe dummy gates 70 and 76. The CMP may also remove the masks 72 and 78on the dummy gates 70 and 76. Accordingly, top surfaces of the dummygates 70 and 76 are exposed through the ILD 88.

In FIGS. 24A, 24B, and 24C, the dummy gates 70 and 76, gate seal spacers80, and portions of the dummy dielectric layer 58 directly underlyingthe dummy gates 70 and 76 are removed in an etching step(s), so thatrecesses 90 are formed. Each recess 90 exposes a channel region of arespective fin 56. Each channel region is disposed between neighboringpairs of epitaxial source/drain regions 82 and 84. During the removal,the dummy dielectric layer 58 may be used as an etch stop layer when thedummy gates 70 and 76 are etched. The dummy dielectric layer 58 and gateseal spacers 80 may then be removed after the removal of the dummy gates70 and 76.

In FIGS. 25A, 25B, and 25C, gate dielectric layers 92 and 96 and gateelectrodes 94 and 98 are formed for replacement gates. Gate dielectriclayers 92 and 96 are deposited conformally in recesses 90, such as onthe top surfaces and the sidewalls of the fins 56 and on sidewalls ofthe gate spacers 86, and on a top surface of the ILD 88. In accordancewith some embodiments, gate dielectric layers 92 and 96 comprise siliconoxide, silicon nitride, or multilayers thereof. In other embodiments,gate dielectric layers 92 and 96 include a high-k dielectric material,and in these embodiments, gate dielectric layers 92 and 96 may have a kvalue greater than about 7.0, and may include a metal oxide or asilicate of Hf, Al, Zr, La, Mg, Ba, Ti, Pb, and combinations thereof.The formation methods of gate dielectric layers 92 and 96 may includeMolecular-Beam Deposition (MBD), Atomic Layer Deposition (ALD), PECVD,and the like.

Next, gate electrodes 94 and 98 are deposited over gate dielectriclayers 92 and 96, respectively, and fill the remaining portions of therecesses 90. Gate electrodes 94 and 98 may be made of a metal-containingmaterial such as TiN, TaN, TaC, Co, Ru, Al, combinations thereof, ormulti-layers thereof. After the filling of gate electrodes 94 and 98, instep 228, a planarization process, such as a CMP, may be performed toremove the excess portions of gate dielectric layers 92 and 96 and thematerial of gate electrodes 94 and 98, which excess portions are overthe top surface of ILD 88. The resulting remaining portions of materialof gate electrodes 94 and 98 and gate dielectric layers 92 and 96 thusform replacement gates of the resulting FinFETs.

The formation of the gate dielectric layers 92 and 96 may occursimultaneously such that the gate dielectric layers 92 and 96 are madeof the same materials, and the formation of the gate electrodes 94 and98 may occur simultaneously such that the gate electrodes 94 and 98 aremade of the same materials. However, in other embodiments, the gatedielectric layers 92 and 96 may be formed by distinct processes, suchthat the gate dielectric layers 92 and 96 may be made of differentmaterials, and the gate electrodes 94 and 98 may be formed by distinctprocesses, such that the gate electrodes 94 and 98 may be made ofdifferent materials. Various masking steps may be used to mask andexpose appropriate regions when using distinct processes.

In FIGS. 26A, 26B, and 26C, an ILD 100 is deposited over ILD 88. Furtherillustrated in FIGS. 26A, 26B, and 26C, contacts 102 and 104 are formedthrough ILD 100 and ILD 88 and contacts 106 and 108 are formed throughILD 100. In an embodiment, the ILD 100 is a flowable film formed by aflowable CVD method. In some embodiments, the ILD 100 is formed of adielectric material such as PSG, BSG, BPSG, USG, or the like, and may bedeposited by any suitable method, such as CVD and PECVD. Openings forcontacts 102 and 104 are formed through the ILDs 88 and 100. Openingsfor contacts 106 and 108 are formed through the ILD 100. These openingsmay all be formed simultaneously in a same process, or in separateprocesses. The openings may be formed using acceptable photolithographyand etching techniques. A liner, such as a diffusion barrier layer, anadhesion layer, or the like, and a conductive material are formed in theopenings. The liner may include titanium, titanium nitride, tantalum,tantalum nitride, or the like. The conductive material may be copper, acopper alloy, silver, gold, tungsten, aluminum, nickel, or the like. Aplanarization process, such as a CMP, may be performed to remove excessmaterial from a surface of the ILD 100. The remaining liner andconductive material form contacts 102 and 104 in the openings. An annealprocess may be performed to form a silicide at the interface between theepitaxial source/drain regions 82 and 84 and the contacts 102 and 104,respectively. Contacts 102 are physically and electrically coupled tothe epitaxial source/drain regions 82, contacts 104 are physically andelectrically coupled to the epitaxial source/drain regions 84, contact106 is physically and electrically coupled to the gate electrode 94, andcontact 108 is physically and electrically coupled to the gate electrode98.

In FIGS. 27A, 27B, and 27C, an Inter-Metal Dielectrics (IMD) 110 isdeposited over ILD 100. Further illustrated in FIGS. 27A, 27B, and 27C,interconnects 124, 126, 128, and 130 formed through IMD 110 to contactrespective conductive features within the underlying ILD 100 (e.g.,contacts 102, 104, 106, and/or 108). In an embodiment, the IMD 110 is amulti-layer film stack formed by the method described above in FIGS. 1-7and/or FIGS. 8-12 and corresponding paragraphs. Layer 114 corresponds toetch stop layer 14 described above, layer 116 corresponds to firstdielectric layer 16 described above, layer 118 corresponds to insertlayers 18 or 26 described above, and layer 120 corresponds to seconddielectric layer 20 described above. These layers are similar to thecorresponding layers described above in previous embodiments and thedescriptions are not repeated herein. Openings for the interconnects124, 126, 128, and 130 are formed through IMD 110 in similar method asdescribed above in FIG. 4 and corresponding paragraphs. These openingsmay all be formed simultaneously in a same process, or in separateprocesses. The interconnects 124, 126, 128, and 130 are formed insimilar method as described above in FIGS. 5-6 and/or FIGS. 11-12 andcorresponding paragraphs. Interconnect 124 is physically andelectrically coupled to contact 106, interconnect 126 is physically andelectrically coupled to the contact 108, interconnects 128 arephysically and electrically coupled to the contacts 102, andinterconnects 130 are physically and electrically coupled to thecontacts 104.

Although not explicitly shown, a person having ordinary skill in the artwill readily understand that further processing steps may be performedon the structure in FIGS. 27A, 27B, and 27C. For example, various IMDsand their corresponding metallizations may be formed over IMD 110.

By providing the insert layer (e.g. layers 18, 26, and/or 118), as aframe for additional structural support, the normally weaker porousmaterial of the surrounding dielectric layers (e.g. layers 16, 20, 116,and/or 120), may be supported. Such additional support helps to reducevariances between different openings that may be caused by theirproximity (or lack of proximity) to neighboring openings. This preventscomplications that could arise during subsequent gap-filling processes.

An embodiment is a method including depositing a first dielectric layerover a substrate, forming a second dielectric layer on the firstdielectric layer, the second dielectric layer having a hardness that isgreater than the first dielectric layer and a K-value that is greaterthan the first dielectric layer, and depositing a third dielectric layerover the second dielectric layer, the third dielectric layer having ahardness that is less than the second dielectric layer and a K-valuethat is less than the second dielectric layer. The method furtherincludes etching the third dielectric layer, the second dielectriclayer, and the first dielectric layer to form a first opening exposing afirst region over the substrate, the first opening having a via openingof a first width and a trench opening of a second width, the trenchopening overlapping the via opening, the second width being greater thanthe first width, a bottom surface of the trench opening being separatedfrom a surface of the second dielectric layer by a first portion of thefirst dielectric layer or a first portion of the third dielectric layer,and filling the first opening with a conductive material to form a firstconductive interconnect contacting the first region of the substrate,the first conductive interconnect comprising a via portion in the viaopening and a trench portion in the trench opening.

Another embodiment is a method including depositing a first dielectriclayer having a first thickness over a conductive element over asubstrate, performing a plasma treatment process to form an insert layeron the first dielectric layer, the insert layer having a K-value that isgreater than the first dielectric layer, wherein after the plasmatreatment process, the first dielectric layer has a second thicknessless than the first thickness, and depositing a second dielectric layerover the insert layer, the second dielectric layer having a K-value thatis less than the insert layer. The method further includes etching thesecond dielectric layer, the insert layer, and the first dielectriclayer to form a via opening exposing the conductive element over thesubstrate, and etching the second dielectric layer to form a trenchopening overlapping the via opening, the trench opening having a greaterwidth than the via opening, a first portion of the second dielectriclayer being interposed between a bottom surface of the trench openingand a top surface of the insert layer.

A further embodiment is a structure including a first dielectric layerover a substrate, an insert layer over and in contact with the firstdielectric layer, the insert layer having a hardness that is greaterthan the first dielectric layer and a K-value that is greater than thefirst dielectric layer, a second dielectric layer over and in contactwith the insert layer, the second dielectric layer having a hardnessthat is less than the insert layer and a K-value that is less than theinsert layer, and a first conductive interconnect extending through thesecond dielectric layer, the insert layer, and the first dielectriclayer to contact a first region over the substrate, the first conductiveinterconnect comprising via portion of a first width and a trenchportion of a second width, the trench portion overlapping the viaportion, the second width being greater than the first width, a bottomsurface of the trench portion being separated from a surface of theinsert layer by a first portion of the first dielectric layer or a firstportion of the second dielectric layer.

In some embodiments, a structure includes a first dielectric layer overa substrate, an insert layer over and in contact with the firstdielectric layer, the insert layer having a hardness that is greaterthan the first dielectric layer and a K-value that is greater than thefirst dielectric layer, and a second dielectric layer over and incontact with the insert layer, the second dielectric layer having ahardness that is less than the insert layer and a K-value that is lessthan the insert layer. The structure further includes a first conductiveinterconnect extending through the second dielectric layer, the insertlayer, and the first dielectric layer to contact a first region over thesubstrate, the first conductive interconnect comprising a via portion ofa first width and a trench portion of a second width, the trench portionoverlapping the via portion, the second width being greater than thefirst width, a bottom surface of the trench portion being separated froma surface of the insert layer by a first portion of the first dielectriclayer or a first portion of the second dielectric layer.

In some embodiments, a structure includes a first dielectric layer overa substrate, the first dielectric layer having a first hardness, asecond dielectric layer over the first dielectric layer, where thesecond dielectric layer has a second hardness larger than the firsthardness, and a third dielectric layer over the second dielectric layer,where the third dielectric layer has a third hardness smaller than thesecond hardness. The structure further includes an interconnectstructure extending through the first dielectric layer, the seconddielectric layer, and the third dielectric layer, where the interconnectstructure has a via portion with a first width and a trench portion witha second width, where the trench portion overlaps with the via portion,and the second width is larger than the first width.

In some embodiments, a structure includes a fin protruding above asubstrate, a gate structure over the fin, an interlayer dielectric overthe gate structure, and a gate contact in the interlayer dielectric, thegate contact being electrically coupled to the gate structure. Thestructure also includes a first dielectric layer over the interlayerdielectric, a second dielectric layer over the first dielectric layer,the second dielectric layer having a second hardness that is larger thana first hardness of the first dielectric layer, and a third dielectriclayer over the second dielectric layer, the third dielectric layerhaving a third hardness smaller than the second hardness. The structurefurther includes a conductive interconnect in the first dielectriclayer, the second dielectric layer, and the third dielectric layer, theconductive interconnect being electrically coupled to the gate contact.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of forming a semiconductor device, themethod comprising: depositing a first dielectric layer over a conductiveelement disposed over a substrate; converting an upper portion of thefirst dielectric layer into an insert layer by performing a plasmaprocess, the insert layer having a hardness greater than that of thefirst dielectric layer; depositing a second dielectric layer on theinsert layer, the second dielectric layer having a hardness less thanthat of the insert layer; and forming a conductive interconnectextending through the second dielectric layer, the insert layer, and thefirst dielectric layer to connect with the conductive element, theconductive interconnect comprising a via section having a first widthand comprising a trench section having a second width, the second widthbeing greater than the first width, wherein a bottom surface of thetrench section is separated from the insert layer.
 2. The method ofclaim 1, wherein the insert layer has a K-value larger than that of thefirst dielectric layer.
 3. The method of claim 2, wherein the seconddielectric layer has a K-value smaller than that of the insert layer. 4.The method of claim 1, wherein the via section is formed between thetrench section and the conductive element.
 5. The method of claim 1,wherein the bottom surface of the trench section is separated from theinsert layer by a portion of the second dielectric layer dispose betweenthe bottom surface of the trench section and the insert layer.
 6. Themethod of claim 1, wherein the trench section is formed to extendthrough the second dielectric layer, through the insert layer, and intothe first dielectric layer.
 7. The method of claim 1, wherein a firstsidewall of the trench section and a first sidewall of the via sectionare aligned along a same vertical line, wherein there is a lateraloffset between a second sidewall of the trench section and a secondsidewall of the via section, with the bottom surface of the trenchsection connecting the second sidewall of the trench section and thesecond sidewall of the via section.
 8. The method of claim 1, whereinthe conductive element over the substrate is a conductive contactelectrically connected to a source/drain region of a transistor.
 9. Themethod of claim 1, wherein a hardness of the first dielectric layer isbetween about 1.5 GPa and about 3.0 GPa, and wherein the hardness of theinsert layer is at least 5 GPa greater than the hardness of the firstdielectric layer.
 10. The method of claim 1, wherein the plasma processis performed using a gas source comprising He, Ar, NH₃, CO₂, N₂, O₂, orcombinations thereof.
 11. The method of claim 10, wherein the plasmaprocess is performed at a temperature in a range between about 200° C.and about 400° C., at a pressure in a range between about 0.5 torr andabout 10 torr.
 12. A method of forming a semiconductor device, themethod comprising: depositing a first dielectric layer over a conductiveelement formed over a substrate; performing a plasma treatment processto convert a top layer of the first dielectric layer into an insertlayer, a second hardness of the insert layer being greater than a firsthardness of the first dielectric layer; depositing a second dielectriclayer on the insert layer, a third hardness of the second dielectriclayer being smaller than the second hardness of the insert layer;etching the second dielectric layer, the insert layer, and the firstdielectric layer to form an opening exposing the conductive element, theopening comprising a via opening and a trench opening over the viaopening, the trench opening having a greater width than the via opening,a bottom surface of the trench opening facing the substrate beingseparated from a surface of the insert layer; and filling the openingwith one or more conductive materials.
 13. The method of claim 12,wherein the first dielectric layer has a first K-value smaller than asecond K-value of the insert layer, and the second dielectric layer hasa third K-value smaller than the second K-value of the insert layer. 14.The method of claim 12, wherein the bottom surface of the trench openingis separated from the insert layer by a portion of the second dielectriclayer.
 15. The method of claim 12, wherein the trench opening is formedto extend through the second dielectric layer, through the insert layer,and into the first dielectric layer.
 16. The method of claim 12, whereinfilling the opening comprises: lining sidewalls and a bottom of theopening with a barrier layer; and filling the opening by forming anelectrically conductive material over the barrier layer.
 17. The methodof claim 12, wherein the plasma treatment process is performed using agas source comprising He, Ar, NH₃, CO₂, N₂, O₂, or combinations thereof.18. A method of forming a semiconductor device, the method comprising:forming a conductive element over a substrate; forming a firstdielectric layer over the conductive element; treating the firstdielectric layer with a plasma process, wherein the plasma processconverts a top layer of the first dielectric layer into an insert layer,wherein a hardness of the insert layer is greater than that of the firstdielectric layer; forming a second dielectric layer over the insertlayer, wherein a hardness of the second dielectric layer is smaller thanthat of the insert layer; forming an opening that extends through thesecond dielectric layer, the insert layer, and the first dielectriclayer to expose the conductive element, wherein the opening comprises avia opening and a trench opening over the via opening, the trenchopening being wider than the via opening, wherein a bottom surface ofthe trench opening facing the substrate is spaced apart from the insertlayer; and filling the opening with one or more conductive materials.19. The method of claim 18, wherein a K-value of the insert layer islarger than that of the first dielectric layer, and a K-value of thesecond dielectric layer is smaller than that of the insert layer. 20.The method of claim 18, wherein the bottom surface of the trench openingis in the second dielectric layer or the first dielectric layer.